features low cost d i f f u s ed j un c t i o n low leakage low forward voltage drop high current capability mechanical data case: jedec do--27,molded plastic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.041ounces, 1.15 grams mounting position: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,50hz,resistive or inductive load. for capacitive load,derate by 20%. units maximum recurrent peak reverse voltage v rrm v max imum rms v oltage v r m s v maximum dc blocking voltage v dc v maximum average forw ard rectified current 9.5mm lead length, @t a =75 peak forw ard surge current 10ms single half-sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 3 .0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 max imum rev er s e r ec ov er y time ( note1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja /w operating junction temperature range t j storage temperature range t stg note:1. measured with i f =0.5a, i r =1a, i rr =0.25a. 2. measured at 1.0mh z and applied rev erse v oltage of 4.0v dc. 3. thermal resistance f rom junction to ambient. 800 560 -55-----+150 -55-----+150 1 .0 20 32 70 60 v o l t a g e r a n g e : 8 0 0 v current: 3.0 a do - 2 7 f a s t r e c o v e ry r e c t i f i e r maximum ratings and electrical characteristics easily cleaned with freon alcohol,isopropanol and s im ilar s olvents i f(av) b y w 178 80 800 3 . 0 a i fsm i r a a 1 . 9 dimensions in millimeters b y w 178 www.diode.kr diode semiconductor korea
- 1 . 0 a - 0 . 2 5 a 0 + 0 . 5 a t rr 1cm pulse generator (note2) d.u.t. 1 n.1. 50 n.1. oscilloscope (note 1) (+) 50vdc (approx) (-) 10 n.1. (-) (+) 0.9 1 . 0 1 . 2 1 . 4 1 . 6 0 . 01 0 . 02 0 . 06 0 . 04 0 . 1 0 . 2 0 . 4 1 . 0 2 4 10 1 0 0 t j =25 pulse width=300 2.2 2.3 0 1 100 10 246 2 0 406 0 t j =125 8.3ms single half sine-wave 20 100 80 60 40 0.6 1.2 1.8 2.4 3.0 025 100 150 0 175 50 125 75 si ngl e phase half walf 60hz resisti ve or inductive load amperes amperes amperes junction capacitance pf instantaneous forward voltage,volts reverse voltage,volts fig.5-- typical junction capacitance 2. rise time=10ns ma x. source impeda nce=5o average forward rectified curren t f i g . 3 -- p e ak f o r w a rd s u r g e c u r r e nt notes:1.rise time =7ns max. input impedance=1m .22pf fi g. 1 -- reverse recovery ti me characteri sti c and test ci rcui t di agram fi g. 2 --forward derati ng curve fi g. 4--typi cal forward characteri sti c peak forward surge current instantaneous reverse current b y w 178 s e t t i m e b a s e f o r 25 ns / c m ambient temperature, n u m b e r o f c y c l e s a t 6 0 h z .1 .2 .4 1 . 0 2 4 1 0 2 0 4 0 1 0 0 1 2 4 10 20 40 60 100 t j =25 f=1mhz diode semiconductor korea www.diode.kr
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